Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-09-20
2009-08-25
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257SE21182, C257SE21562, C257SE21571, C257SE29193, C257S616000, C438S200000
Reexamination Certificate
active
07579617
ABSTRACT:
A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.
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Hatada Akiyoshi
Katakami Akira
Ohta Hiroyuki
Shimamune Yosuke
Tamura Naoyoshi
Fujitsu Microelectronics Limited
Gumedzoe Peniel M
Lee Eugene
Westerman, Hattori, Daniels & Adrian , LLP.
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