Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-30
2011-08-30
Smith, Zandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29266
Reexamination Certificate
active
08008718
ABSTRACT:
The semiconductor device of the present invention is a semiconductor device including P-type and N-type thin film transistors, at least one of the N-type thin film transistors having an off-set gate structure, at least one of the P-type thin film transistors having a LDD structure, wherein a P-type high concentration impurity layer for forming the at least one P-type thin film transistor is formed on the semiconductor layer in a region other than a region below a gate electrode and a sidewall spacer and contains a higher concentration of a P-type impurity together with an impurity contained in an N-type low concentration impurity layer and an N-type high concentration impurity layer for forming the N type thin film transistor.
REFERENCES:
patent: 5264383 (1993-11-01), Young
patent: 5563427 (1996-10-01), Yudasaka et al.
patent: 5879976 (1999-03-01), Fujiwara
patent: 5923961 (1999-07-01), Shibuya et al.
patent: 5953582 (1999-09-01), Yudasaka et al.
patent: 6121660 (2000-09-01), Yamazaki et al.
patent: 6160269 (2000-12-01), Takemura et al.
patent: 6172671 (2001-01-01), Shibuya et al.
patent: 6509212 (2003-01-01), Zhang et al.
patent: 2003/0104659 (2003-06-01), Arakawa et al.
patent: 2005/0164434 (2005-07-01), Arakawa et al.
patent: 4-323875 (1992-11-01), None
patent: 6-13404 (1994-01-01), None
patent: 6013404 (1994-01-01), None
patent: 6-140424 (1994-05-01), None
patent: 9-172183 (1997-06-01), None
patent: 10-65176 (1998-03-01), None
patent: 10-144929 (1998-05-01), None
patent: 2000-183355 (2000-06-01), None
patent: 2003-229433 (2003-08-01), None
International Search Report for PCT/JP2005/019060 mailed Feb. 21, 2006 (English and Japanese).
Naraghi Ali
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Smith Zandra
LandOfFree
Semiconductor device and production method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and production method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and production method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2700026