Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2004-12-24
2009-10-06
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S493000, C257S496000, C438S140000, C438S259000, C438S270000
Reexamination Certificate
active
07598586
ABSTRACT:
A semiconductor device, including: a semiconductor substrate of a first conductivity; and a semiconductor layer provided on the semiconductor substrate and having a super junction structure including drift layers of the first conductivity and RESURF layers of a second conductivity different from the first conductivity, the drift layers and the RESURF layers being laterally arranged in alternate relation parallel to the semiconductor substrate, the RESURF layers being each provided alongside an interior side wall of a trench penetrating through the semiconductor layer, the drift layers each having an isolation region present between the RESURF layer and the semiconductor substrate to prevent the RESURF layer from contacting the semiconductor substrate.
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Saggio M et al: “MDMESH™: Innovative Technology for High Voltage PowerMOSFETS” Proceedings of the International Symposium on Powersemiconductor Devices and ICS, New York, NY, US, May 22, 2000, pp. 65-68, XP00985371.
Rabin & Berdo PC
ROHM Co. Ltd.
Wojciechowicz Edward
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