Semiconductor device and process of production of same

Details Semiconductor device and process of production of same Semiconductor device and process of production of same

2007-01-02

2007-01-02

Graybill, David E. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S189000, C438S202000, C438S309000, C438S378000

Reexamination Certificate

active

10816307

ABSTRACT:
A semiconductor device comprising: a first insulating film formed on a semiconductor substrate; a semiconductor layer at least a part of which is formed on the first insulating film; a second insulating film comprising a non-doped silicon oxide film and formed on the semiconductor layer; a third insulating film comprising a silicon oxide film containing at least phosphorus formed on the second insulating film; and a fourth insulating film comprising a non-doped silicon oxide film formed on the third insulating film.

REFERENCES:
patent: 4795722 (1989-01-01), Welch et al.
patent: 4807016 (1989-02-01), Douglas
patent: 5118634 (1992-06-01), Neudeck
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5321301 (1994-06-01), Sato
patent: 5966609 (1999-10-01), Kwon
patent: 6268297 (2001-07-01), Nag et al.
patent: 6327006 (2001-12-01), Sato et al.
patent: 6480244 (2002-11-01), Murade et al.
patent: 2002/0000659 (2002-01-01), Toyosawa et al.
patent: 2002/0093019 (2002-07-01), Hirabayashi et al.

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