Semiconductor device and process for production thereof

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437187, 437196, 437197, 437199, H01L 2144

Patent

active

055653804

ABSTRACT:
A semiconductor device having an interconnecting line formed of aluminum containing a predetermined additive element, wherein a segregate layer of the additive element is formed along aluminum grain boundaries in the interconnecting line on the basis of a heat treatment after the formation of the interconnecting line.

REFERENCES:
patent: 3725309 (1973-04-01), Ames et al.
patent: 4249957 (1981-02-01), Koliwad et al.
patent: 4495221 (1985-01-01), Broadbent
patent: 4837183 (1989-06-01), Polito et al.
patent: 5091770 (1992-02-01), Yamaguchi
patent: 5238874 (1993-08-01), Yamada
patent: 5300307 (1994-04-01), Freard et al.
D. R. Frear et al., "The Evolution of Microstructure in Al-2 Pct Cu Thin Films: Precipitation, Dissolution, and Reprecipitation," Metallurgical Transactions A, vol. 21A, Sep. 1990, pp. 2449-2458.
T. Nemoto et al., "Segregation of Cu to Grain Boundaries by Aging Treatment and its Effects on EM Resistance for AlCu/TiN Lines," LSI Research Center, Kawasaki Steel Corporation, publication date unknown.
D. Weston et al., "Microcorrosion of Al--Cu and Al--Cu--Si alloys: Interaction of the metallization with subsequent aqueous photolithographic processing," J. Vac. Sci. Technol. A, vol. 8 No. 3, May/Jun. 1990, pp. 2025-2032.
C. Kim et al., "The influence of Cu precipitation of electromigration failure in Al--Cu--Si," J. Appl. Phys., vol. 72, No. 5, Sep. 1, 1992, pp. 1837-1845.
"Patent Abstracts of Japan", JP-A-62 240 733, Apr. 13, 1988, vol. 12, No. 117, p. 114, C 487.
"Patent Abstracts of Japan", JP-A-62 240 734, Apr. 13, 1988, vol. 12, No. 117, p. 114, C 487.
"Patent Abstracts of Japan", JP-A-62 240 735, Apr. 13, 1988, vol. 12, No. 117, p. 115 C 487.
"Patent Abstracts of Japan", JP-A-62 240 736, Apr. 13, 1988, vol. 12, No. 117, p. 115 C 487.
"Patent Abstracts of Japan", JP-A-62 240 737, Apr. 13, 1988, vol. 12, No. 117, p. 115 C 487.
"Patent Abstracts of Japan", JP-A-62 240 738, Apr. 13, 1988, vol. 12, No. 117, p. 116 C 487.
"Patent Abstracts of Japan", JP-A-62 240 739, Apr. 13, 1988, vol. 12, No. 117, p. 116 C 487.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and process for production thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and process for production thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and process for production thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1245668

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.