Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-01
2011-03-01
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27006
Reexamination Certificate
active
07898036
ABSTRACT:
A semiconductor device includes a semiconductor substrate; a gate electrode formed on the semiconductor substrate; source and drain extension regions formed in the semiconductor substrate on a first and a second side corresponding to a first sidewall surface and a second sidewall surface, respectively, of the gate electrode; a first piezoelectric material pattern formed on the semiconductor substrate continuously covering the first sidewall surface of the gate electrode from the first side of the gate electrode; a second piezoelectric material pattern formed on the semiconductor substrate continuously covering the second sidewall surface of the gate electrode from the second side of the gate electrode; and source and drain regions formed in the semiconductor substrate outside the source extension region and the drain extension, respectively.
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Dickey Thomas L
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Yushin Nikolay
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