Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2005-04-05
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S387000, C257S412000, C257S413000, C257S616000, C257S755000, C257S756000, C438S151000, C438S157000, C438S182000, C438S279000, C438S283000
Reexamination Certificate
active
06876045
ABSTRACT:
This specification relates to a process for manufacturing a semiconductor device, comprising the steps of: forming a lower gate electrode film on a semiconductor substrate10via a gate insulating film11; forming an upper gate electrode film on the lower gate electrode film, the upper gate electrode film being made of a material having a lower oxidation rate than that of the lower gate electrode film; forming a gate electrode12by patterning the upper gate electrode film and the lower gate electrode film, the gate electrode12comprising a lower gate electrode element12aand an upper gate electrode element12b; forming source/drain regions15by introducing an impurity into the semiconductor substrate10; and forming oxide film sidewalls13by oxidizing the side faces of the lower gate electrode element12aand the upper gate electrode element12b, the thickness of the oxide film sidewalls13in the gate length direction being larger at the sides of the lower gate electrode element12athan at the sides of the upper gate electrode element12b.
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McDermott Will & Emery LLP
Wojciechowicz Edward
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