Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – By pressure alone
Patent
1995-07-27
1997-07-29
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
By pressure alone
257147, 257150, 257151, 257152, H01L 2348
Patent
active
056524676
ABSTRACT:
An auxiliary cathode lead is contacted to a cathode buffer electrode which contacts to an unit GTO arranged at the most remote region from a gate pressure contacting portion of a GTO pellet and the push-into effect of the auxiliary cathode current during the turn-off can be remarkably performed. Without inviting bad affects such as the increase in "on" voltage, it is proposed a package structure of a semiconductor which the unit GTO arranged remote from a gate is easily to perform the turn-off. The maximum turn-off current can be heightened, it can easily correspond to the increase in the diameter of the pellet according to the large current of the unit element. Further, a condenser of a snubber circuit as a protection circuit of the unit GTO in a power inverter can be small, and the snubber loss can be lessened.
REFERENCES:
patent: 4374393 (1983-02-01), Kamahara
patent: 4953004 (1990-08-01), Almenrader et al.
patent: 4996586 (1991-02-01), Matsuda et al.
patent: 5198882 (1993-03-01), Matsuda et al.
Onose Hidekatsu
Sakurada Shuroku
Arroyo T. M.
Hitachi , Ltd.
Saadat Mahshid D.
LandOfFree
Semiconductor device and package structure therefore and power i does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and package structure therefore and power i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and package structure therefore and power i will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-635737