Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-02
1997-05-20
Hajec, Donald T.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257328, 257400, H01L 2976
Patent
active
056314876
ABSTRACT:
In a semiconductor device including a field effect transistor comprising a base area, a source area, a drain area and a gate area provided on a channel forming area via a gate insulating area, the base area portion being sandwiched by the source area and the drain area, there is provided a drain electrode contacting the drain area, a source electrode contacting only the source area and a gate electrode contacting the gate area. Because this arrangement does not incorporate a parasitic diode, it can be used in a system utilizing the back electromotive force of the motor, in which a reverse current blocking diode is not included and a highly efficient driver circuit can be arranged. Further, there is provided a motor driver circuit utilizing such a semiconductor device.
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patent: 4145700 (1979-03-01), Jambotkar
patent: 4374455 (1983-02-01), Goodman
patent: 4933730 (1990-06-01), Shirato
patent: 5072267 (1991-10-01), Hattori
patent: 5121176 (1992-06-01), Quigg
patent: 5144401 (1992-09-01), Ogura et al.
patent: 5204593 (1993-04-01), Ueki
Hajec Donald T.
NEC Corporation
Tremblay Mark
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