Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-05-01
2007-05-01
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S701000, C438S713000, C438S978000, C257SE21214, C257S347000
Reexamination Certificate
active
10476978
ABSTRACT:
A method of manufacturing a semiconductor device of the present invention includes (a) sequentially forming a gate insulating film14, a first conductive layer15and a first insulating film16on a semiconductor layer13provided on an insulating film12; (b) selectively removing the semiconductor layer, the gate insulating film, the first conductive layer and the first insulating film to form a device isolation trench; (c) forming a second insulating film17in the device isolation [element separation] trench, wherein a height of an upper surface of the second insulating film is substantially coincident with that of an upper surface of the first insulating film; (d) removing a part of the second insulating film and the first insulating film such that a height of an upper surface of the exposed first conductive layer is substantially coincident with that of the top surface of the second insulating film; and (e) patterning the first conductive layer to form a gate electrode.
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Translation of the International Preliminary Examination Report dated May 19, 2003 for PCT/JP02/09043.
Chinese Office Action dated Jul. 22, 2005 with English translation.
Koh Risho
Ri Jyonu
Saito Yukishige
Takemura Hisashi
Isaac Stanetta
Lebentritt Michael
McGinn IP Law Group PLLC
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