Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1997-07-15
2000-11-28
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257750, 257758, H01L 2348, H01L 2352, H01L 2940
Patent
active
061539376
ABSTRACT:
An object of the present invention is to provide a semiconductor device where a metal wiring pattern is improved in order to prevent photoresist foaming from occurring without employing a special process, even if a protective layer void occur in a wire to wire space in the metal wire, and an arrangement method for a semiconductor device pattern. To achieve the above object, the present invention provides a semiconductor device comprising a first wiring layer and a second wiring layer arranged in a row on a semiconductor substrate, and a insulating layer on the first wiring layer and the second wiring layer so that a first portion of the insulating layer on the first wiring layer is prevented from touching a second portion of the insulating layer on the second wiring layer.
REFERENCES:
patent: 4997790 (1991-03-01), Woo et al.
patent: 5019535 (1991-05-01), Wojnarowski et al.
patent: 5293503 (1994-03-01), Nishigoori et al.
patent: 5405807 (1995-04-01), Baker et al.
patent: 5432128 (1995-07-01), Tsu
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5567660 (1996-10-01), Chen et al.
patent: 5567661 (1996-10-01), Nishio et al.
patent: 5627403 (1997-05-01), Bacchetta et al.
patent: 5665643 (1997-09-01), Shin
patent: 5665657 (1997-09-01), Lee
patent: 5716872 (1998-02-01), Isobe
patent: 5798298 (1998-08-01), Yang et al.
patent: 5821174 (1998-10-01), Hong et al.
patent: 5872052 (1999-02-01), Iyer
patent: 5872401 (1999-02-01), Huff et al.
Irie Seishi
Sato Takahiro
Clark Jhihan B
Hardy David
Kabushiki Kaisha Toshiba
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