Semiconductor device and method of testing the same

Details Semiconductor device and method of testing the same Semiconductor device and method of testing the same

1997-11-21

1999-05-04

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

438 14, 438 18, H01L 2358

Patent

active

059006455

ABSTRACT:
A semiconductor device is tested without destroying a substrate immediately after a formation of a metal film and before patterning the metal film.
To this end, the substrate is first divided into a product region and a test pattern region. Next, an insulating film is formed on the substrate. Thereafter, openings are formed in the insulating film and on the product region and the test pattern region. Subsequently, the metal film is formed in the openings and on the insulating film. Finally, the metal film is patterned to form a wiring pattern.
Under these circumstances, a forming state of the metal film in the opening on the test pattern region is actually tested. Specifically, the presence or absence of a void is checked. In accordance with this test result, a forming state of the metal film in the opening in the product region is evaluated.

REFERENCES:
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5609775 (1997-03-01), Liu
patent: 5614114 (1997-03-01), Owen
patent: 5637186 (1997-06-01), Liu et al.
patent: 5661345 (1997-08-01), Wada et al.

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