Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

1999-07-13

2000-11-14

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257476, 257481, 257482, 365175, 365177, H01L 2702, H01L 2948

Patent

active

061473863

ABSTRACT:
A semiconductor device of the present invention is a semiconductor device of a complementary MIS field effect transistor, wherein an anode of a first diode is connected to a silicon substrate of a first conduction type while a cathode of the first diode is connected to a first power supply while a cathode of a second diode is connected to a well of the other conduction type and an anode of the second diode is connected to a second power supply.

REFERENCES:
patent: 4903087 (1990-02-01), Jerome et al.
patent: 5061981 (1991-10-01), Hall
patent: 5260594 (1993-11-01), Shimizu
"1V, 10MHz High-Speed Digital Circuit Technology with Multi-Threshold CMOS." Techincal Report Of IEICE. ICD93-107, Oct. 1993, pp. 23-27.

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