Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With heat sink means
Patent
1999-04-27
2000-08-15
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With heat sink means
257666, 257672, 257673, 257780, 257783, 257784, 257675, H01L 23495
Patent
active
061040851
ABSTRACT:
A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
REFERENCES:
patent: 4399610 (1983-08-01), Moyer
patent: 4819041 (1989-04-01), Redmond
patent: 5036381 (1991-07-01), Lin
patent: 5114880 (1992-05-01), Lin
patent: 5138430 (1992-08-01), Gou, III et al.
patent: 5216283 (1993-06-01), Lin
patent: 5258649 (1993-11-01), Tanaka et al.
patent: 5263245 (1993-11-01), Patel et al.
patent: 5289344 (1994-02-01), Gagnon et al.
patent: 5318451 (1994-06-01), DelPrete et al.
patent: 5345106 (1994-09-01), Doering et al.
patent: 5350713 (1994-09-01), Liang
patent: 5402006 (1995-03-01), O'Denley
patent: 5457605 (1995-10-01), Wagner et al.
patent: 5489801 (1996-02-01), Blish, II
"Flat Package using three-layer film", IBM Technical Disclosure Bulletin, vol. 31, No. 8, Jan. 1989.
Hata Toshiyuki
Koike Nobuya
Muto Kuniharu
Nishikizawa Atsushi
Shimizu Ichio
Hardy David
Hitachi , Ltd.
Hitachi Tohbu Semiconductor, Ltd.
Ortiz Edgardo
LandOfFree
Semiconductor device and method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of producing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2009788