Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2009-10-09
2011-10-04
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S203000, C365S205000, C365S226000
Reexamination Certificate
active
08031513
ABSTRACT:
A semiconductor device includes: a memory cell; a precharge circuit; a negative potential applying circuit; and a sense amplifier. The memory cell is connected to a first bit line and store data. The precharge circuit is connected to the first and second bit lines and precharges the first and second bit lines to a ground potential. The negative potential applying circuit is connected to the first bit line and applies a negative potential to the first bit line. The sense amplifier is connected to the first and second bit lines and read data based on a difference between a first potential of the first bit line and a second potential of the second bit line. An absolute value of the negative potential is smaller than the difference between the first potential and the second potential.
REFERENCES:
patent: 6111802 (2000-08-01), Kano et al.
patent: 6914840 (2005-07-01), Agata
patent: 2004-265533 (A) (2004-09-01), None
Foley & Lardner LLP
Ho Hoai V
Renesas Electronics Corporation
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