Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-28
1999-02-16
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, 438617, H01L 2144
Patent
active
058720502
ABSTRACT:
A semiconductor device has a semiconductor element, an output terminal coupled to the semiconductor element and a thin metal member or foil secured to an output terminal. A protective layer covers the semiconductor element including the periphery of the metal foil to define an opening located at the metal foil. By covering the periphery of the metal foil, the protective layer secures the metal foil to the semiconductor element. A lead element is affixed to the metal foil by soldering through the opening. The resulting structure increases the adhesion of the lead element. Furthermore, because the protective film covers and seals the periphery of the metal foil, the advance of moisture into the inside of the semiconductor device is retarded. Accordingly the moisture resistance of the semiconductor device is improved.
REFERENCES:
patent: 3868724 (1975-02-01), Perrino
patent: 4290079 (1981-09-01), Carpenter et al.
patent: 4486445 (1984-12-01), Algod
patent: 4521476 (1985-06-01), Asai et al.
patent: 4733289 (1988-03-01), Tsurumaru
patent: 4974057 (1990-11-01), Tazima
patent: 5083187 (1992-01-01), Lamson et al.
patent: 5107325 (1992-04-01), Nakayoshi
patent: 5133810 (1992-07-01), Morizane et al.
patent: 5438222 (1995-08-01), Yamazani
Haga Takahiro
Kaido Yoshinori
Yasuda Takayoshi
Picardat Kevin M.
Sanyo Electric Co,. Ltd.
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