Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Patent
1997-10-15
2000-02-29
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
257109, 257131, 257156, H01L 2630, H01L 2974
Patent
active
060312769
ABSTRACT:
A semiconductor device includes a plurality of defect layers separated from one another in the semiconductor layer. A distance separating any adjacent ones of the defect layers is kept such that they are prevented from contacting each other and those regions having effect of shortening a carrier lifetime overlap each other.
REFERENCES:
patent: 4920396 (1990-04-01), Shinohara et al.
patent: 4972239 (1990-11-01), Mihara
patent: 5243205 (1993-09-01), Kitagawa et al.
patent: 5250446 (1993-10-01), Osawa et al.
Baba Yoshiro
Hori Shizue
Osawa Akihiko
Tsuchitani Masanobu
Kabushiki Kaisha Toshiba
Thomas Tom
Vu Hung Kim
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