Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1996-01-30
1998-09-29
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257491, 257768, H01L 2976, H01L 2978
Patent
active
058148752
ABSTRACT:
A field shield element for isolating semiconductor devices formed on a common substrate. The field shield element comprises an electrode of a high melting point metal which may have a reduced thickness and which avoids punch through of a connection point through the field shield electrode during manufacture. By employing the shield gate electrode metal having a high melting point, the reduction in thickness of the shield gate electrode provides a corresponding reduction in thickness of the offset existing between the semiconductor device and the isolation structure formed with the field shield element. The shield gate electrode may be combined with metal silicon compounds, and metal nitrides to realize the foregoing benefits of avoiding punchthrough and reducing the offset.
REFERENCES:
patent: 3970486 (1976-07-01), Kooi
patent: 4845544 (1989-07-01), Shimizu
patent: 5164803 (1992-11-01), Ozaki et al.
patent: 5289025 (1994-02-01), Lee
patent: 5521419 (1996-05-01), Wakamiya et al.
patent: 5606195 (1997-02-01), Hooper et al.
Monin Donald
Nippon Steel Corporation
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