Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-02-15
2011-12-13
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S675000, C438S618000, C438S622000, C438S625000, C438S642000, C438S643000, C438S648000, C438S649000, C257SE21585, C257SE21586, C257SE21593, C257SE21622, C257SE21627, C257SE21634, C257SE21156
Reexamination Certificate
active
08076239
ABSTRACT:
A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.
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Akiyama Shin-ichi
Kawamura Kazuo
Takesako Satoshi
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Garber Charles
Sene Pape
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