Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-04
2011-12-06
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S500000, C257S758000, C257SE21409, C257SE27004, C257SE29255, C365S185280, C349S046000, C438S296000
Reexamination Certificate
active
08072035
ABSTRACT:
In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.
REFERENCES:
patent: 2002/0000633 (2002-01-01), Miyashita
patent: 2006/0050566 (2006-03-01), Shiba et al.
patent: 2007/0029676 (2007-02-01), Takaura et al.
patent: 4-171938 (1992-06-01), None
patent: 2005-116744 (2005-04-01), None
Maeda Atsushi
Terada Yusuke
Toyokawa Shigeya
Mandala Victor A
Miles & Stockbridge P.C.
Moore Whitney T
Renesas Electronics Corporation
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