Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-04-22

2011-10-11

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S289000, C438S258000

Reexamination Certificate

active

08034695

ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of: forming a first silicon oxide film which covers a first region on the top surface of a silicon substrate, but which does not cover a second region and a third region thereon; oxidizing the silicon substrate to thicken the first silicon oxide film formed on the first region, and to form a second silicon oxide film on the second region and the third region; forming a first silicon film which covers the first region and the second region, but which does not cover the third region; etching and removing the second silicon oxide film formed on the third region by using the first silicon film as a mask; and forming a third silicon oxide film on the third region, the third silicon oxide film being thinner than the second silicon oxide film.

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