Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-12-10
2011-12-20
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C257SE27016, C257S379000
Reexamination Certificate
active
08080852
ABSTRACT:
The semiconductor device includes a first MIS transistor including a gate insulating film92, a gate electrode108formed on the gate insulating film92and source/drain regions154, a second MIS transistor including a gate insulating film96thicker than the gate insulating film92, a gate electrode108formed on the gate insulating film96, source/drain regions154and a ballast resistor120connected to one of the source/drain regions154, a salicide block insulating film146formed on the ballast resistor120with an insulating film92thinner than the gate insulating film96interposed therebetween, and a silicide film156formed on the source/drain regions154.
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Anezaki Toru
Ema Taiji
Kojima Hideyuki
Tsutsumi Tomohiko
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Mandala Victor A
Stowe Scott
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