Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2010-03-09

2011-11-01

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S405000, C438S149000, C257S347000, C257S348000

Reexamination Certificate

active

08048759

ABSTRACT:
The present invention aims at offering the semiconductor device which has the structure which are a high speed and a low power, and can be integrated highly. The present invention is a semiconductor device formed in the SOI substrate by which the BOX layer and the SOI layer were laminated on the silicon substrate. And the present invention is provided with the FIN type transistor with which the gate electrode coiled around the body region formed in the SOI layer, and the planar type transistor which was separated using partial isolation and full isolation together to element isolation, and was formed in the SOI layer.

REFERENCES:
patent: 6573563 (2003-06-01), Lee et al.
patent: 6911383 (2005-06-01), Doris et al.
patent: 7173319 (2007-02-01), Iwamatsu et al.
patent: 2002/0123205 (2002-09-01), Iwamatsu et al.
patent: 2005-19996 (2005-01-01), None

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