Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2009-09-09
2011-10-04
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S462000, C438S622000, C438S667000, C257SE21575, C257SE21599
Reexamination Certificate
active
08030179
ABSTRACT:
The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.
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Fukuyama Ryota
Hoshino Masataka
Kasai Junichi
Masuda Naomi
Meguro Kouichi
Spansion LLC
Trinh Michael
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