Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-05-02

2011-10-11

Landau, Matthew (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S737000, C257S775000, C257SE23011, C257SE23019

Reexamination Certificate

active

08035231

ABSTRACT:
The semiconductor device1includes interconnect layers10, 20, an IC chip30, via plugs42, 44, a seal resin50, and solder balls60. The interconnect layer10includes a via plug42. An end face of the via plug42on the side of the interconnect layer20is smaller in area than the opposite end face, i.e. the end face on the side of the IC chip30. An end face of the via plug44on the side of the interconnect layer10is smaller in area than the opposite end face, i.e. the end face on the side of the solder balls60. The thermal decomposition temperature of the insulating resin14constituting the interconnect layer10is higher than that of the insulating resin24constituting the interconnect layer20.

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