Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2010-01-07

2011-10-25

Dang, Trung Q (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21679, C257SE27103, C438S267000

Reexamination Certificate

active

08044455

ABSTRACT:
A step is provided between a substrate surface of a select gate and a substrate surface of a memory gate. When the substrate surface of the select gate is lower than the substrate surface of the memory gate, electrons in a channel upon writing obliquely flow in the step portion. Even if the electrons obtain the energy required for passing a barrier during the oblique flow, the electron injection does not occur because electrons are away from the substrate surface. The injection can occur only on a drain region side from a position where the electrons reach the substrate surface. As a result, the injection of the electrons into a gap region is suppressed, so that the electron distribution comes close to the hole distribution. Therefore, variation in a threshold value upon information retention is suppressed, and information-retaining characteristics of a memory cell are improved.

REFERENCES:
patent: 6972997 (2005-12-01), Ishimaru et al.
patent: 7872298 (2011-01-01), Shimamoto et al.
patent: 2003-046002 (2003-02-01), None
patent: 2004-363122 (2004-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4265816