Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1994-12-05

1998-06-16

Niebling, John

Fishing, trapping, and vermin destroying

437 44, 437 57, 437160, 437164, H01L 21265

Patent

active

057669651

ABSTRACT:
A diffused layer serves as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.

REFERENCES:
patent: 4356623 (1982-11-01), Hunter
patent: 5001082 (1991-03-01), Goodwin-Johansson
patent: 5024959 (1991-06-01), Pfiester
patent: 5061649 (1991-10-01), Takenouchi
patent: 5443994 (1995-08-01), Solheim
Wolf, "Silicon Processing for the VLSI Era vol. 2: Process Integration", Latice Press, pp. 354-361, 1990.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1725013