Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-22
2010-11-02
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S565000, C257S365000
Reexamination Certificate
active
07825442
ABSTRACT:
In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type silicon substrate. In the epitaxial layer, P type diffusion layers as a base region, N type diffusion layers as collector regions and an N type diffusion layer as an emitter region are formed. In this event, the P type diffusion layers are formed so as to have a double diffusion structure, and an impurity concentration in a surface of the base region and in a region adjacent thereto is set high. This structure enables improvement in high frequency characteristics and in a current amplification factor while maintaining breakdown voltage characteristics of an NPN transistor.
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Fish & Richardson P.C.
Menz Laura M
Sanyo Electric Co,. Ltd.
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