Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-10-21

2010-10-19

Lebentritt, Michael S. (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S157000, C438S197000, C257S410000, C257S411000, C257S356000, C257S349000

Reexamination Certificate

active

07816242

ABSTRACT:
A semiconductor device includes a plate of semiconductor layer, an insulator layer formed on the plate of semiconductor layer and brought into contact with the plate of semiconductor layer by at least two adjacent faces, a thickness of the insulator layer in the vicinity of a boundary line between the two adjacent faces being larger than that of the insulator layer in a region other than the vicinity of the boundary line, and a band of conductor layer formed facing a middle portion of the plate-like semiconductor layer via the insulator layer.

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Notification of Reasons for Rejection issued Dec. 4, 2007, in Japanese Application No. 2004-273509.

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