Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-09-27

1998-11-24

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438651, 438655, 438 64, H01L 214763

Patent

active

058406263

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a first metal film including a first metal on a surface of a silicon film by sputtering using a gas mixture added with a nitrogen gas, the first metal being one of nickel and cobalt, and causing thermal reaction of the silicon film with the first metal film to form a silicide film of the first metal.

REFERENCES:
patent: 5108953 (1992-04-01), Tateiwa
patent: 5217923 (1993-06-01), Suguro
patent: 5567651 (1996-10-01), Berti et al.
patent: 5624869 (1997-04-01), Agnello et al.
patent: 5654237 (1997-08-01), Suguro et al.

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