Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-01
2010-02-09
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S328000, C257S330000, C257S397000, C257SE29197, C257SE29201, C257SE21382
Reexamination Certificate
active
07659576
ABSTRACT:
A punch-through type IGBT generally has a thick p++-type collector layer. Therefore, the FWD need be externally attached to the IGBT when the IGBT is used as a switching element in an inverter circuit for driving a motor load, and thus the number of processes and components increases. In the invention, trenches are formed penetrating through a collector layer and reaching a buffer layer. A collector electrode is formed in the trenches, too. With this structure, a current path is formed between an emitter electrode and the collector electrode without through the collector layer and functions as the FWD.
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Kameyama Kojiro
Okada Kikuo
Liu Benjamin Tzu-Hung
Morrison & Foerster / LLP
Ngo Ngan
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
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