Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-06-28

2009-06-16

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S284000

Reexamination Certificate

active

07547950

ABSTRACT:
A conventional semiconductor device has a problem that it is difficult to obtain a desired breakdown voltage characteristic due to a reduction in a punch-through breakdown voltage between drain and source regions. In a semiconductor device according to the present invention, a P type diffusion layer is formed in an N type epitaxial layer. An N type diffusion layer as a back gate region is formed in the P type diffusion layer. The N type diffusion layer is formed by self-alignment using a drain electrode. This structure makes it possible to increase an impurity concentration of the N type diffusion layer in a vicinity of a P type diffusion layer as a source region. As a result, it is possible to improve a punch-through breakdown voltage between the drain and the source regions, and to achieve a desired breakdown voltage characteristic of the MOS transistor.

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patent: 1770410 (2006-05-01), None
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