Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-07-14

1999-11-30

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438123, 257673, 257666, H01L 2144

Patent

active

059942126

ABSTRACT:
A semiconductor chip is bonded onto a die pad portion of a lead frame including nickel/palladium/gold stacked plate layers. Then, a first bonding procedure is carried out with a metal wire of gold pressed against an electrode pad of the semiconductor chip while applying a load of approximately 60 g and ultrasonic waves with a power of approximately 55 mW by using a bonding tool. Subsequently, a second bonding procedure is carried out with the metal wire pressed against an inner lead portion of the lead frame while applying a load of 150 through 250 g and the ultrasonic waves with a power of 0 through 20 mW. In the second bonding procedure, the wire bonding in conformity with the property of the stacked plate layers can be conducted using a large load and a small ultrasonic power, resulting in attaining firm bonding in a short period of time without causing peeling of the gold plate layer.

REFERENCES:
patent: 4707418 (1987-11-01), Takiar et al.
patent: 4821148 (1989-04-01), Kobayashi et al.
patent: 4908933 (1990-03-01), Sagisaka et al.
patent: 5138431 (1992-08-01), Huang et al.
patent: 5221428 (1993-06-01), Ohsawa et al.
patent: 5359223 (1994-10-01), Nakamori
patent: 5492233 (1996-02-01), Kusagaya
patent: 5683943 (1997-11-01), Yamada
patent: 5684379 (1997-11-01), Serizawa
patent: 5735030 (1998-04-01), Orcutt
patent: 5801436 (1998-09-01), Serizawa

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