Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-12-06
2009-12-15
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000, C257S508000, C257S665000, C257SE23147, C257SE23149, C257SE23150, C257SE21592, C438S132000, C438S467000, C438S601000
Reexamination Certificate
active
07633136
ABSTRACT:
A semiconductor device includes an interlayer insulating film on a substrate. A runner part includes a plurality of runner lines spaced apart from each other by a regular interval under the interlayer insulating film. A fuse cut part includes a plurality of fuse lines spaced apart from each other by a wider interval than the interval between the runner lines. A via in the interlayer insulating film connects a fuse line and a runner line to each other.
REFERENCES:
patent: 6172896 (2001-01-01), Lee
patent: 6531757 (2003-03-01), Shiratake
patent: 6541290 (2003-04-01), Bang et al.
patent: 6597054 (2003-07-01), Prall et al.
patent: 6822309 (2004-11-01), Hirota
patent: 7057217 (2006-06-01), Kang et al.
patent: 7361967 (2008-04-01), Takahashi et al.
patent: 2004/0140501 (2004-07-01), Kim
patent: 2000-357873 (2000-12-01), None
patent: 2002-151593 (2002-05-01), None
patent: 2005-032916 (2005-02-01), None
English language abstract for Japanese Publication No. 2002-151593.
English language abstract for Japanese Publication No. 2005-032916.
F. Chau & Associates LLC
Huynh Andy
Samsung Electronics Co,. Ltd.
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4093728