Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-02-07

2009-08-04

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S277000, C257S758000, C257SE27009, C257SE21022

Reexamination Certificate

active

07569908

ABSTRACT:
A semiconductor device including inductors with improved reliability and a method of manufacturing the same are provided. The semiconductor device may include a substrate, an insulating film pattern formed on the substrate and having an opening, an amorphous metal nitride film formed inside the opening, a diffusion reducing or preventing film formed on the amorphous metal nitride film, and a conductive film including the diffusion reducing or preventing film filling the inside of the opening.

REFERENCES:
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patent: 2003/0222295 (2003-12-01), Lin
patent: 2006/0170072 (2006-08-01), Nakashiba
patent: 2006/0263727 (2006-11-01), Lee et al.
patent: 2006/0267198 (2006-11-01), Lin et al.
patent: 2007/0170591 (2007-07-01), Yamanoue et al.
patent: 11-176639 (1999-07-01), None
patent: 100248517 (1999-12-01), None
patent: 10-2003-0052491 (2003-06-01), None
patent: 10-2004-0080539 (2004-09-01), None
Korean Patent Office Action for corresponding Korean patent application dated Aug. 27, 2007.

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