Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-01-04

2008-11-11

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S209000, C257SE21592

Reexamination Certificate

active

07449764

ABSTRACT:
Provided are a semiconductor device which substantially prevents repair failure and a method of manufacturing the same. The semiconductor device includes a plurality of first fuses formed apart from each other on a semiconductor substrate, and on which a protective layer is formed; a first insulating layer filled in between the first fuses and configured to expose the protective layer; a plurality of second fuses formed between the first fuses and on the first insulating layer; and a second insulating layer formed on the first insulating layer, wherein the second insulating layer includes a fuse window configured to fully expose the second fuses and the protective layer formed on the first fuses.

REFERENCES:
patent: 6822309 (2004-11-01), Hirota
patent: 2000-349155 (2000-12-01), None
patent: 1020040008706 (2004-01-01), None

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