Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S612000, C438S613000, C257SE21512, C257SE21518, C257SE25013

Reexamination Certificate

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07456091

ABSTRACT:
A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area) ≧400.

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Kim et al. (Mechanics of materials, ([Jan.-Feb.] 2006), 38(1-2), 119-127, 10 refs. Conference: MM2003 International Symposium on Macro-, Meso-, Micro- and Nano-Mechanics of Materials, Kowloon (Hong Kong), Dec. 8, 2003). (Available online at www.sciencedirect.com).

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