Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-16
2008-11-25
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S613000, C257SE21512, C257SE21518, C257SE25013
Reexamination Certificate
active
07456091
ABSTRACT:
A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area) ≧400.
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Aga Fumiaki
Arakawa Hideyuki
Kuraya Hidetoshi
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Tran Long K
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