Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2004-05-31
2008-11-11
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S066000, C257S067000, C257S069000, C257S369000, C257S401000, C257SE29003, C257SE33003, C257SE27064
Reexamination Certificate
active
07449719
ABSTRACT:
A gate insulating film is formed using a plasma on a three-dimensional silicon substrate surface having a plurality of crystal orientations. The plasma gate insulating film experiences no increase in interface state in any crystal orientations and has a uniform thickness even at corner portions of the three-dimensional structure. By forming a high-quality gate insulating film using a plasma, there can be obtained a semiconductor device having good characteristics.
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B. Yu et al., “Fin FET Scaling to 10nm Gate Length,” International Electron Devices Meeting (IEDM), Technical Digest 2002, pp. 251-254.
Ohmi Tadahiro
Teramoto Akinobu
Foley & Lardner LLP
Ho Hoang-Quan
Huynh Andy
Ohmi Tadahiro
Tokyo Electron Limited
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