Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-28
2008-10-28
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S506000, C257SE27060
Reexamination Certificate
active
07442995
ABSTRACT:
Each of channel regions2aand3bis covered by a gate electrode6via a gate insulation film5and side wall spacers9from its top face to both side faces along an x-direction. In other words, there is no insulation material of an STI element isolation structure4on both side faces along the x-direction of each of the channel regions2band3b(in a non-contact state), thereby preventing stress in a z-direction from being applied by the STI element isolation structure4to each of the channel region2band2b.
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Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
Wilczewski M.
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