Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-04-06

2008-08-19

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S618000, C257S757000, C257S768000, C257S773000

Reexamination Certificate

active

07414291

ABSTRACT:
A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p+diffused region; implanting indium into the surface of the p+diffused region, to form an indium-implanted layer; forming a contact metal layer on the indium-implanted layer; and reacting silicon in the silicon substrate including the indium-implanted layer with metal in the contact metal layer to form a titanium silicide layer.

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