Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-08-03

2008-10-14

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000

Reexamination Certificate

active

07436024

ABSTRACT:
A lateral MOSFET and a method of forming thereof includes a p-type semiconductor substrate, a first n-type well in the surface portion of the semiconductor substrate, an n+-type drain region in the first n-type well, a p-type well in the first n-type well, an n+-type source region in the p-type well, a gate oxide film on the portion of the p-type well between the n+-type source region and the first n-type well, a gate electrode on the gate oxide film, and a second n-type well containing the p-type well therein to increase the n-type impurity concentration in the vicinity of the junction between the p-type well and the first n-type well beneath the gate and to increase the impurity amount and the thickness of the n-type semiconductor region beneath the p-type well. The first and second n-type wells can be overlapping or formed continuous or contiguous with each other. The lateral MOSFET exhibits a high punch-through breakdown voltage suitable for a high-side switch.

REFERENCES:
patent: 7173308 (2007-02-01), Kitaguchi
patent: 11-102982 (1999-04-01), None
patent: 11-121742 (1999-04-01), None
patent: 2001-352070 (2001-12-01), None

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