Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-02
2008-09-02
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C257S339000
Reexamination Certificate
active
07420245
ABSTRACT:
A first semiconductor pillar layer of a first conductivity type is formed on a main surface of a semiconductor substrate of the first conductivity type. A second semiconductor pillar layer of a second conductivity type is formed adjacent to the first semiconductor pillar layer. A third semiconductor pillar layer of the first conductivity type is formed adjacent to the second semiconductor pillar layer. A semiconductor base layer of the second conductivity type is formed on the main surface of the second semiconductor pillar layer. An insulated-gate type semiconductor element is formed in the semiconductor base layer. The carrier concentration on the side of a main surface of each of said first through third semiconductor pillar layers is higher than a carrier concentration on the opposite side of said main surface in each of said first through third semiconductor pillar layers.
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Matsuda Tetsuo
Okumura Hideki
Tsuchitani Masanobu
Yamashita Atsuko
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pham Long
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