Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-08-02

2008-09-02

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S339000

Reexamination Certificate

active

07420245

ABSTRACT:
A first semiconductor pillar layer of a first conductivity type is formed on a main surface of a semiconductor substrate of the first conductivity type. A second semiconductor pillar layer of a second conductivity type is formed adjacent to the first semiconductor pillar layer. A third semiconductor pillar layer of the first conductivity type is formed adjacent to the second semiconductor pillar layer. A semiconductor base layer of the second conductivity type is formed on the main surface of the second semiconductor pillar layer. An insulated-gate type semiconductor element is formed in the semiconductor base layer. The carrier concentration on the side of a main surface of each of said first through third semiconductor pillar layers is higher than a carrier concentration on the opposite side of said main surface in each of said first through third semiconductor pillar layers.

REFERENCES:
patent: 6475864 (2002-11-01), Sato et al.
patent: 6611021 (2003-08-01), Onishi et al.
patent: 6888195 (2005-05-01), Saito et al.
patent: 2004/0238844 (2004-12-01), Tokano et al.
patent: 2001-119022 (2001-04-01), None
patent: 2002-170955 (2002-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3986903