Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2004-12-15

2008-03-11

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S082000, C438S099000, C438S725000, C438S780000

Reexamination Certificate

active

07341936

ABSTRACT:
A semiconductor device manufacturing method comprises the steps of forming a metal film (24) on an organic interlayer insulating film (22) formed over a semiconductor substrate to get a metal diffusion preventing metal carbide film (23) on a boundary between the organic interlayer insulating film (22) and the metal film (24), and leaving the metal carbide film (23) on the organic interlayer insulating film (22) by removing selectively the metal film (24) from the metal carbide film (23).

REFERENCES:
patent: 5973400 (1999-10-01), Murakami et al.
patent: 6187672 (2001-02-01), Zhao et al.
patent: 6592771 (2003-07-01), Yamanaka et al.
patent: 10-98011 (1998-04-01), None
patent: WO 01/15220 (2001-03-01), None
Office Action dated May 11, 2006, issued in corresponding Korean Application No. 10 2005 7000561.

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