Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-03-18

2008-03-18

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S641000, C438S675000

Reexamination Certificate

active

11265683

ABSTRACT:
Provided are a semiconductor device, adapted to be capable of fabricating the device having improved resistance characteristic by decreasing dishing of solid phase epitaxy (SPE) silicon during planarization in a landing plug forming process via use of SPE silicon, and a method of manufacturing the same.The method of manufacturing a semiconductor device in accordance with the present invention comprises, forming a plurality of gates on a semiconductor substrate; forming an interlayer dielectric film thereon, such that the gates are embedded; selectively etching the interlayer dielectric film to open a landing plug-forming region; depositing SPE silicon, such that the opened landing plug-forming region in the interlayer dielectric film is embedded; implanting boron ions into the SPE silicon; and annealing the resulting boron ion-implanted structure.

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patent: 6008085 (1999-12-01), Sung et al.
patent: 6159839 (2000-12-01), Jeng et al.
patent: 2004/0102039 (2004-05-01), Lim et al.
patent: 2005/0245073 (2005-11-01), Lee et al.
patent: 20010064122 (2001-07-01), None
patent: 1020030056340 (2003-07-01), None
patent: 10-2004-0025967 (2004-03-01), None
patent: 20050000059 (2005-01-01), None

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