Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-27
2007-11-27
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257S337000, C257S339000, C257S401000, C257S341000
Reexamination Certificate
active
11151410
ABSTRACT:
A semiconductor substrate of a first conduction type is provided for serving as a common drain to a plurality of power MISFET cells. A middle semiconductor layer is formed on the semiconductor substrate and has a lower impurity concentration than that of the semiconductor substrate. Pillar regions are formed on the middle semiconductor layer and include semiconductor regions of the first conduction type having a lower impurity concentration than that of the middle semiconductor layer.
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G. Deboy, et al. “A New Generation of High Voltage MOSFETs Breaks The Limit Line Of Silicon”, IEDM 98, pp. 683-685, 1998.
Izumisawa Masaru
Kimura Manabu
Kobayashi Hitoshi
Kouzuki Shigeo
Okumura Hideki
Kabushiki Kaisha Toshiba
Le Thao P.
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