Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-11-27

2007-11-27

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

11153367

ABSTRACT:
According to an aspect of the invention, there is provided a semiconductor device provided with a CMOS-FET circuit, comprising at least one of a tensile stress film disposed in a part of an element isolating film around an NMOS forming region and having a tensile stress, and a compressive stress film disposed in a part of an element isolating film around a PMOS forming region and having a compressive stress.

REFERENCES:
patent: 6717216 (2002-12-01), Smith et al.
patent: 6838327 (2005-01-01), Sakamoto et al.
patent: 6882025 (2005-04-01), Yeo et al.
patent: 7091561 (2006-08-01), Matsushita et al.
patent: 2004/0192009 (2004-09-01), Belyansky et al.
patent: 2005/0074946 (2005-04-01), Chu et al.
patent: 2005/0156274 (2005-07-01), Yeo et al.
patent: 2005/0199945 (2005-09-01), Kodama et al.
patent: 2003-060076 (2003-02-01), None
patent: 2003-179157 (2003-06-01), None
patent: 3441259 (2003-06-01), None
patent: 2004-063591 (2004-02-01), None
Shimizu, A et al., “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement,” IEEE Electron Devices Meeting, 2001, IEDM Technical Digest, International, Dec. 2-4, 2001, pp. 19.4.1-19.4.4.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3836756