Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-06-12
2007-06-12
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S406000, C438S455000, C438S503000, C257SE29193, C257SE29122, C257SE21567, C257SE21569
Reexamination Certificate
active
11064943
ABSTRACT:
A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first insulating layer interposed therebetween, forming a second insulating layer on a side of the first semiconductor layer, epitaxially growing a second semiconductor layer in a region on the semiconductor substrate other than a region formed with the first insulating layer, forming a first semiconductor element in the first semiconductor layer on the first insulating layer, and forming a second semiconductor element in the second semiconductor layer on the second insulating layer.
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Takagi Shin-ichi
Usuda Koji
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson George
Kabushiki Kaisha Toshiba
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