Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1992-10-08

1995-01-24

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257621, 257773, 257774, 437 29, 437180, 437203, 437913, 437954, H01L 2348, H01L 21265

Patent

active

053844750

ABSTRACT:
When the present invention is used for an EPROM, diffused wiring regions for bit lines on a semiconductor substrate, epitaxial layers on the semiconductor substrate and the diffused wiring region, drain diffused regions and source diffused regions on the epitaxial layer are provided, and internal contacts for electrically connecting the diffused wiring regions to the drain diffused regions and the source diffused regions are formed. Contact holes indispensably need a predetermined size so as to preferably conduct, but the wirings are buried in the epitaxial layer to reduce or eliminate the contact holes and to improve integration.

REFERENCES:
patent: 4816421 (1989-03-01), Dynes et al.
patent: 4982244 (1991-01-01), Kapoor
patent: 5122856 (1992-06-01), Komiya

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