Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S783000, C257SE21209, C257SE21273, C257SE29272

Reexamination Certificate

active

10187192

ABSTRACT:
There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment.

REFERENCES:
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 6464853 (2002-10-01), Iwasaki et al.
patent: 6576568 (2003-06-01), Mandal et al.

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