Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-20
2007-03-20
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S675000, C257SE21578
Reexamination Certificate
active
11311285
ABSTRACT:
A manufacturing method of a semiconductor device comprises the steps of forming an etching stop insulating film (18) that covers at least side surfaces of a wiring (16) in a first region (2) and a first-stage conductive plug (15b) in a second region (3), then forming insulating films (20, 28) on the etching stop insulating film (18) and the wiring (16), then forming a hole (28) on a first-stage conductive plug (15b) by etching a part of the insulating films (20, 28) until the etching stop insulating film (18) is exposed, then exposing an upper surface of the first-stage conductive plug (15b) by etching selectively the etching stop insulating film (18) through the hole (28), and then forming a second-stage conductive plug (31a) in the hole (28).
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Korean Office Action dated Feb. 27, 2006.
Picardat Kevin M.
Westerman, Hattori, Daniels & Adrian , LLP.
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